India’s Defence Research and Development Organisation (DRDO) has achieved a transformative milestone in defence electronics with the successful development of indigenous Gallium Nitride (GaN) semiconductor chips — a feat that marks a decisive shift in the country’s technological autonomy and strategic capability. This achievement, emerging from years of sustained research and innovation, places India alongside a select group of countries with advanced compound semiconductor capabilities and strengthens its defence industrial base amid evolving global security dynamics.

What Are GaN Chips and Why They Matter

Gallium Nitride (GaN) chips represent a class of compound semiconductors that outperform traditional silicon-based technologies in power efficiency, thermal tolerance and high-frequency performance. Unlike silicon, GaN can operate at much higher power densities and elevated temperatures, making it ideal for defence systems where reliability under extreme conditions is critical. These characteristics are especially valuable in active electronically scanned array (AESA) radars, missile seekers, electronic warfare systems, communication arrays and surveillance sensors, which demand compact, high-power, high-frequency performance.

Experts characterise compound semiconductor technologies like GaN and Silicon Carbide (SiC) as “thoroughbred racehorses” of modern defence electronics — systems that deliver superior range, resolution and signal fidelity in comparison with legacy counterparts.

From Technology Denial to Indigenous Mastery

The journey toward GaN mastery in India began as a response to foreign technology denial regimes that restricted access to high-end semiconductor technologies during sensitive defence procurements. A notable example occurred during negotiations for the Rafale fighter jet acquisition, when France declined to transfer restricted chip-level technologies under offset requirements. Rather than accept continued dependence, Indian scientists initiated a long-term indigenous development effort led by DRDO labs.

Two principal research centres spearheaded this effort:

• Solid State Physics Laboratory (SSPL), Delhi — focusing on material growth, device physics and compound semiconductor device design.

   

• Gallium Arsenide Enabling Technology Centre (GAETEC), Hyderabad — concentrating on compound chip fabrication, testing and integration.

   

By late 2025 and into 2026, DRDO scientists had successfully decoded and implemented GaN technology at the level of monolithic microwave integrated circuits (MMICs) and high-power GaN High Electron Mobility Transistors (HEMTs), a critical achievement for defence electronic systems.

Strategic and Operational Implications

The GaN breakthrough is not merely a laboratory milestone — it has direct implications for India’s defence preparedness, sensor infrastructure and future combat platforms:

• Enhanced Radar and AESA Systems: GaN-based radar modules allow systems to transmit and receive much higher power with reduced heat loss, improving detection range, resolution and reliability — vital for surveillance and targeting.

   

• Missile Seekers and Electronic Warfare: GaN chips’ high-frequency handling and thermal tolerance make them suitable for compact, resilient radar seekers and EW systems used in both air-to-air and surface-to-air engagements.

   

• Communication and Satellite Systems: GaN’s superior power efficiency enhances satellite payloads and communication terminals, especially where size, weight and power constraints are critical.

   

The integration of GaN in defence electronics also supports self-reliance in mission-critical technology, reducing dependency on imports and external suppliers. DRDO leadership has emphasised this capability as a strategic buffer against supply disruptions and export control regimes in times of geopolitical tension.

Broader Technological Context

GaN development is part of a broader global emphasis on third-generation semiconductor technologies, which include GaN and SiC. These technologies are rapidly shaping defence, telecommunications, electric vehicles, power electronics and 5G infrastructure due to their ability to handle extreme operating conditions and high efficiencies.

India’s achievement places it in an elite cohort of nations — including the United States, France, Russia, Germany, South Korea and China — actively pursuing sovereign GaN semiconductor capabilities.

Expert Perspectives and Domestic Innovation Ecosystem

Officials within DRDO, including Suma Varughese — Director General of Micro Electronic Devices and Computational Systems — have highlighted that GaN chips are not incremental advancements but foundational enablers for next-generation defence systems. These chips allow systems such as AESA radars to deliver significantly greater range and resolution, while electronic warfare setups benefit from enhanced power management and frequency agility.

The GaN initiative also bolsters India’s indigenous semiconductor ecosystem, encouraging domestic research institutions, startups and industry partners to participate in high-end chip design and fabrication research.

Integration into Defence Platforms

While the GaN chips themselves are an achievement, the ongoing work involves incorporating them into operational systems. DRDO’s progress in GaN technology aligns with advancements in long-range radars, missile guidance systems and next-generation avionics, where compound semiconductors enable performance far beyond what silicon technology can offer.

Indigenous GaN technology is expected to play a key role in future sensor suites for platforms such as radar networks and upgraded fighter aircraft systems, enhancing India’s air domain awareness and electronic warfare capabilities.

Strategic Autonomy and Future Prospects

From a strategic standpoint, achieving GaN chip capability is a milestone in India’s pursuit of technological sovereignty. DRDO’s advancements underscore a wider national effort toward self-reliance in defence technology, consistent with the government’s “Aatmanirbhar Bharat” (self-reliant India) vision.

Officials estimate that mastering and iterating next-generation semiconductor technologies — including further refinement of GaN and related systems — will be a multi-year endeavour. However, the successful development of indigenous GaN chips demonstrates India’s capacity to innovate at the highest technical levels, insulating its defence industry from external constraint and positioning it for leadership in future electronic warfare technologies.

Why This Breakthrough Matters

The indigenous GaN chip triumph represents more than a single technical achievement; it embodies a shift in India’s defence technology trajectory — from dependence on foreign suppliers to authentic self-sufficiency in core electronic systems. As warfare becomes increasingly reliant on advanced sensors, radar systems and digital electronics, the mastery of GaN technology equips India with tools essential for next-generation defence capabilities, operational autonomy and strategic deterrence in the evolving security environment.